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Updated: Feb 24, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
A Cd(ii)-based MOF as a photosensitive Schottky diode: experimental and theoretical studies
Shibashis Halder1, Arka Dey, Aradhita Bhattacharjee
1Department of Chemistry, Jadavpur University, Kolkata, 700 032, India. proy@chemistry.jdvu.ac.in.
Abstract:
A Cd(ii) based 2D metal-organic framework (MOF), [Cd(4-bpd)(SCN)2]n (1) where 4-bpd = 1,4-bis(4-pyridyl)-2,3-diaza-1,3-butadiene, has been synthesized and characterized by standard methods including single crystal X-ray diffraction analysis. When it is sandwiched between ITO coated glass and Al, 1 shows interesting conduction properties. The I-V characteristics of the ITO/1/Al configuration measured in the dark and under illumination of incident light exhibit a highly non-linear rectifying behavior, which signifies its Schottky diode character. The conductivity of the configuration is 2.90 × 10-4 S m-1 and 7.16 × 10-4 S m-1 under dark and photoirradiation conditions, respectively. Different parameters have been analyzed and these indicate that 1 can be a promising candidate for light sensing electronic devices. This material has good sensitivity to the light source when switched on/off. Theoretical calculations have been performed to understand the reason for the enhancement of conductivity under illumination of incident light. It has been found that upon irradiation, slight changes in the bond distances of 4-bpd in 1 occur. These changes are related to the considerable decrease in the energy needed for the allowed electronic transition. This may influence the increase of conductivity along with other factors.
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