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Updated: Feb 24, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Tailoring the Doping Mechanisms at Oxide Interfaces in Nanoscale
Weitao Dai1, Ming Yang1, Hyungwoo Lee2
1Department of Physics and Astronomy, West Virginia University , Morgantown, West Virginia 26506, United States.
Abstract:
Here, we demonstrate the nanoscale manipulations of two types of charge transfer to the LaAlO3/SrTiO3 interfaces: one from surface adsorbates and another from oxygen vacancies inside LaAlO3 films. This method can be used to produce multiple insulating and metallic interface states with distinct carrier properties that are highly stable in air. By reconfiguring the patterning and comparing interface structures formed from different doping sources, effects of extrinsic and intrinsic material characters on the transport properties can be distinguished. In particular, a multisubband to single-subband transition controlled by the structural phases in SrTiO3 was revealed. In addition, the transient behaviors of nanostructures also provided a unique opportunity to study the nanoscale diffusions of adsorbates and oxygen vacancies in oxide heterostructures. Knowledge of such dynamic processes is important for nanodevice implementations.

