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Related Experiment Video

Updated: Feb 24, 2026

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV
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Te-based chalcogenide materials for selector applications.

A Velea1,2, K Opsomer3, W Devulder3

  • 1Imec, Kapeldreef 75, 3001, Heverlee, Belgium. alin.velea@infim.ro.

Scientific Reports
|August 16, 2017
PubMed
Summary
This summary is machine-generated.

Improving thermal stability in Ovonic Threshold Switches (OTS) is crucial for resistive switching memory. This study enhances OTS materials using phase diagrams and doping, leading to better thermal stability for advanced memory applications.

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Area of Science:

  • Materials Science
  • Solid-State Electronics
  • Non-Volatile Memory Technologies

Background:

  • Dense one-selector one-resistor (1S1R) resistive switching memory arrays require reliable selectors.
  • Ovonic threshold switches (OTS) using chalcogenide materials are promising but limited by low thermal stability.

Purpose of the Study:

  • To improve the thermal stability of OTS materials for enhanced resistive switching memory.
  • To expand and refine phase diagrams for OTS material selection.
  • To explore material compositions and processing routes for higher crystallization temperatures.

Main Methods:

  • Expanded and improved phase diagrams for OTS materials.
  • Explored binary Ge-Te and Si-Te systems, using Si doping and reduced Te content.
  • Electrically assessed selector devices (down to 55x55 nm²) using sub-threshold conduction models (Poole-Frenkel).
  • Applied glass transition temperature estimation models to predict thermal stability.

Main Results:

  • Identified routes like Si doping and reduced Te content to increase crystallization temperature.
  • Extracted as-processed material parameters (trap height, defect density) from electrical assessments.
  • Correlated a lower average number of p-electrons with improved thermal stability in Te-based materials.

Conclusions:

  • Developed strategies to enhance the thermal stability of OTS materials.
  • Material parameter extraction and predictive modeling are key for designing stable OTS.
  • Optimized chalcogenide compositions show potential for next-generation resistive switching memory.