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Updated: Feb 24, 2026

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
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Two-photon absorption and subband photodetection in monolayer MoS2
Optics Letters
|August 16, 2017
Abstract:
We develop a theoretical model to quantify the two-photon absorption (2 PA) coefficients of monolayer MoS2. Based on two-dimensional excitons, our model reveals the 2 PA coefficient spectrum on the order of 0.01-0.1 cm/MW in the near-infrared for monolayer MoS2. As compared to the band theory for bulk semiconductors, these coefficients are enhanced by at least one order of magnitude. Our model is in agreement with light-intensity-dependent photocurrent measurements on a monolayer MoS2, subband photodetector with femtosecond laser pulses.

