Related Experiment Video
Updated: Feb 24, 2026

Spark Plasma Sintering Apparatus Used for the Formation of Strontium Titanate Bicrystals
Published on: February 9, 2017
Hysteresis and bonding reconstruction in the pressure-induced B3-B1 phase transition of 3C-SiC
Miguel A Salvadó1, R Franco1, Pilar Pertierra1
1MALTA Team and Departamento de Química Física y Analítica, Universidad de Oviedo, E-33006 Oviedo, Spain. mass@uniovi.es.
Abstract:
The determination of kinetic factors affecting phase metastability is crucial for the design of materials out of the ambient conditions. At a given temperature, the kinetic barrier associated with the reconstruction of the bonding network of a pressure-induced phase transition can be only overcome at pressures where the available vibrational energy of the system is equal or higher than the corresponding activation energy. Our work demonstrates that these pressures provide boundaries to hysteresis cycles that can be evaluated following a three-step computational strategy: (i) total energy electronic structure calculations, (ii) determination of vibrational contributions by means of a simple Debye model, and (iii) description of the energetic profile along the transition path in the framework of the martensitic approximation. In the 3C-SiC polytype, our results reveal that the high pressure rock-salt (B1) structure can not be quenched on release of pressure unless temperature is close to 0 K. The B1 phase transforms back to the low-pressure zinc blende (B3) polymorph at 300 K if pressure is below 30 GPa, in very good agreement with experimental observations. These results are supported by a full characterization of the B3-B1 energetic transition profile in terms of the chemical changes of the bonding network topologically analysed with the electron localization function.
Related Concept Videos
Thermal Sigmatropic Reactions: Overview
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in 1,5-hexadiene, referred...
Valence Bond Theory
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the involved orbitals. The...
Hybridization of Atomic Orbitals I
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

