Ultrasensitive Silicon Nanowire Sensor Developed by a Special Ag Modification Process for Rapid NH₃ Detection

Surface functionalization is very effective in enhancing sensing properties of a chemiresistive gas sensor. In this work, we develop a novel and cost-effective process to prepare Ag-modified silicon nanowire (SiNW) sensors and further suggest a resistance effect model to clarify the enhanced sensing mechanism of Ag-modified SiNWs. The SiNWs were formed via metal-assisted chemical etching (MACE), and the Ag nanoparticle (NP) modification was achieved in situ based on the MACE-produced Ag dendrites by involving a crucial anisotropic postetching of TMAH. The TMAH etching induces a loose array of needle-like, rough SiNWs (RNWs) with firm attachment of tiny Ag NPs. Comparative investigations for NH₃-sensing properties indicate that the RNWs modified by discrete Ag NPs (Ag@RNWs) display an ∼3-fold enhancement in gas response at room temperature compared with pristine SiNWs. Meanwhile, transient response and ultrafast recovery are observed for the Ag@RNW sensor (t_res ≤ 2 s and t_rec ≤ 9 s to 0.33-10 ppm of NH₃). The study demonstrates the considerable effect and potential of the Ag modification process developed in this work. A resistance effect model was further suggested to clarify the underlying mechanism of the enhanced response and the response saturation characteristic of the Ag@RNWs. The promotion of TMAH etching-induced microstructure modulation to sensing properties was also demonstrated.