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Updated: Feb 24, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Published on: January 9, 2014
Tetsuya Mizumoto1, Yuya Shoji2, Ryohei Takei3
1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan. tmizumot@pe.titech.ac.jp.
Surface-activated direct bonding enables low-temperature joining of dissimilar materials like magneto-optic garnet with silicon and semiconductors. This technique is key for developing advanced waveguide optical isolators, improving device performance and size.
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