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The Potentiodynamic Bottom-up Growth of the Tin Oxide Nanostructured Layer for Gas-Analytical Multisensor Array Chips
Fedor S Fedorov1, Dmitry Podgainov2, Alexey Varezhnikov3
1Laboratory of Nanomaterials, Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel Str., 143026 Moscow, Russia. fedorov_fs@daad-alumni.de.
Abstract:
We report a deposition of the tin oxide/hydroxide nanostructured layer by the potentiodynamic method from acidic nitrate solutions directly over the substrate, equipped with multiple strip electrodes which is employed as a gas-analytical multisensor array chip. The electrochemical synthesis is set to favor the growth of the tin oxide/hydroxide phase, while the appearance of metallic Sn is suppressed by cycling. The as-synthesized tin oxide/hydroxide layer is characterized by mesoporous morphology with grains, 250-300 nm diameter, which are further crystallized into fine SnO₂ poly-nanocrystals following heating to 300 °C for 24 h just on the chip. The fabricated layer exhibits chemiresistive properties under exposure to organic vapors, which allows the generation of a multisensor vector signal capable of selectively distinguishing various vapors.