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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

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Mott transition by an impulsive dielectric breakdown.

H Yamakawa¹, T Miyamoto¹, T Morimoto¹

¹Department of Advanced Materials Science, University of Tokyo, Chiba 277-8561, Japan.

Nature Materials

|August 22, 2017

Summary

Strong terahertz electric fields can induce a Mott transition in organic materials via dielectric breakdown. This purely electronic transition is faster and more coherent than laser-induced methods.

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Area of Science:

Condensed matter physics
Materials science
Quantum electronics

Background:

Mott transitions, the change from insulator to metal, are typically induced by doping or photoirradiation.
Organic materials and transition-metal compounds exhibit Mott transitions.

Purpose of the Study:

To investigate a new pathway for inducing Mott transitions using strong electric fields.
To explore the dynamics of Mott transitions induced by terahertz electric-field pulses.

Main Methods:

Applied terahertz electric-field pulses to an ET-based compound, κ-(ET)₂Cu[N(CN)₂]Br.
Observed the collapse of the Mott gap and analyzed spectral weight changes.
Compared the transition speed and coherence with femtosecond laser-pulse irradiation.

Main Results:

Impulsive dielectric breakdown induced a Mott transition, collapsing the Mott gap (∼30 meV) in ∼0.1 ps.
Quantum tunneling produced doublon-holon pairs, indicated by nonlinear increases in low-energy spectral weights.
The terahertz-induced metallization was faster and exhibited more electronic and coherent dynamics than laser-induced methods.

Conclusions:

Strong terahertz-pulse irradiation is an effective method for achieving a purely electronic Mott transition.
This approach offers a new pathway to study and understand the quantum nature of Mott transitions.
The findings advance the understanding of electronic phase transitions in correlated materials.