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Related Concept Videos

Carrier Transport01:21

Carrier Transport

1.0K
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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Relation between Poisson's ratio, Modulus of Elasticity and Modulus of Rigidity01:15

Relation between Poisson's ratio, Modulus of Elasticity and Modulus of Rigidity

644
Deformation occurs in axial and transverse directions when an axial load is applied to a slender bar. This deformation impacts the cubic element within the bar, transforming it into either a rectangular parallelepiped or a rhombus, contingent on its orientation. This transformation process induces shearing strain. Axial loading elicits both shearing and normal strains. Applying an axial load instigates equal normal and shearing stresses on elements oriented at a 45° angle to the load axis.
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Generalized Hooke's Law01:22

Generalized Hooke's Law

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The generalized Hooke's Law is a broadened version of Hooke's Law, which extends to all types of stress and in every direction. Consider an isotropic material shaped into a cube subjected to multiaxial loading. In this scenario, normal stresses are exerted along the three coordinate axes. As a result of these stresses, the cubic shape deforms into a rectangular parallelepiped. Despite this deformation, the new shape maintains equal sides, and there is a normal strain in the direction of the...
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Gauss's Law in Dielectrics01:17

Gauss's Law in Dielectrics

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Consider a polar dielectric placed in an external field. In such a dielectric, opposite charges on adjacent dipoles neutralize each other, such that the net charge within the dielectric is zero. When a polar dielectric is inserted in between the capacitor plates, an electric field is generated due to the presence of net charges near the edge of the dielectric and the metal plates interface. Since the external electrical field merely aligns the dipoles, the dielectric as a whole is neutral. An...
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Deformations in a Transverse Cross Section01:21

Deformations in a Transverse Cross Section

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When a material is subjected to uniaxial stress, it elongates or contracts in the direction of the applied force, and also undergoes changes in the perpendicular directions. This behavior is crucial for understanding how materials behave under stress and is governed by mechanical properties such as Poisson's ratio v, which measures the ratio of transverse strain to axial strain.
As the material stretches, it expands or contracts in orthogonal directions to the load. This phenomenon varies...
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Anisotropic carrier mobility in buckled two-dimensional GaN.

Lijia Tong1, Junjie He2, Min Yang1

  • 1State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, P. R. China. chenzh@nwpu.edu.cn.

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Buckled two-dimensional (2D) Gallium Nitride (GaN) exhibits tunable carrier mobility exceeding 2D Molybdenum Disulfide. Chemical modification allows switching between p-type and n-type conductivity for advanced electronics.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Nanoelectronic engineering demands 2D materials with high carrier mobility and wide band-gaps.
  • Existing materials like 2D Molybdenum Disulfide (MoS2) have limitations.

Purpose of the Study:

  • To theoretically investigate the intrinsic carrier mobilities of buckled 2D Gallium Nitride (GaN).
  • To explore the potential of buckled 2D GaN for nanoelectronic applications.

Main Methods:

  • Theoretical investigation of carrier mobilities in buckled 2D GaN.
  • Analysis of hydrofluorinated (FGaNH) and hydrogenated (HGaNH) forms of buckled 2D GaN.

Main Results:

  • Anisotropic carrier mobilities in buckled 2D GaN surpass those in 2D MoS2.
  • Carrier mobility is tunable by altering surface chemical bonds (Ga-F-Ga to Ga-H).
  • Conversion from FGaNH to HGaNH suppresses hole mobility and shifts conductivity from p-type to n-type.

Conclusions:

  • Buckled 2D GaN is a promising material for future conductivity-adjustable electronics.
  • Tunable electronic properties offer new possibilities in nanoelectronic device design.