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Strain controlled switching effects in phosphorene and GeS.

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We explored ferroelastic switching in phosphorene and GeS using first-principles calculations. GeS shows potential for nonvolatile memory devices due to its tunable electronic properties and high on/off ratio.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Phosphorene and its analogs, like GeS, exhibit unique electronic properties.
  • Ferroelastic switching offers a mechanism for controlling material properties.

Purpose of the Study:

  • To investigate the ferroelastic switching behavior of phosphorene and GeS using computational methods.
  • To explore the potential of these materials in nanoelectronic devices, particularly for nonvolatile memory applications.

Main Methods:

  • First-principles calculations.
  • Combined approach of density functional theory (DFT) and nonequilibrium Green's function (NEGF) technique.
  • Analysis of transmission coefficients under uniaxial strain.

Main Results:

  • Ferroelastic switching along zigzag and armchair directions alters the band gap of phosphorene and GeS.
  • The band gap exhibits a tunable behavior, decreasing and then increasing with structural transformation.
  • Uniaxial strain effectively controls the transport properties of phosphorene and GeS.
  • GeS demonstrates a high on/off transmission coefficient ratio (approximately 1000) between stable ferroelastic states.

Conclusions:

  • Ferroelastic switching is a viable mechanism for tuning the electronic and transport properties of phosphorene and GeS.
  • GeS shows significant promise for the development of next-generation ferroic nonvolatile memory devices.