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Related Experiment Video

Updated: Feb 23, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Customized binary and multi-level HfO_2-x-based memristors tuned by oxidation conditions.

Weifan He^1,2, Huajun Sun^3,4, Yaxiong Zhou^1,2

¹School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.

Scientific Reports

|September 1, 2017

Summary

Hafnium oxide memristors offer dual modes for memory applications. Tailored oxidation conditions enable customized binary and multi-level HfO_2-x memristors with high-speed switching and stable resistance states.

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Last Updated: Feb 23, 2026

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Memristors, particularly those based on hafnium oxide (HfO_2-x), are key for next-generation non-volatile memory due to CMOS compatibility.
Previous research focused on independent resistive transitions, lacking unified HfO_2-x material customization for binary and multi-level operations.

Purpose of the Study:

To develop customized binary and multi-level memristors using a unified HfO_2-x material.
To investigate the impact of oxidation conditions on memristive properties and device performance.

Main Methods:

Fabrication of Pt/HfO_2-x/Ti memristors with varying HfO_2-x oxidation states.
Characterization of resistive switching behavior, including forming voltage, SET voltage, and R_off/R_on windows.
Evaluation of switching speed, data retention, and multi-level state stability.

Main Results:

Achieved forming-free and low-voltage operation by tuning HfO_2-x oxidation.
Demonstrated regular increases in forming voltage, SET voltage, and R_off/R_on with increasing O/Hf ratio.
Confirmed high-speed switching (10 ns pulses, 10³ cycles) and retention (>10⁴ s at 85°C) for binary mode.
Verified 12 stable resistance states for multi-level mode via multi-window switching (10 ns to 1 μs).

Conclusions:

Customized HfO_2-x memristors exhibit tunable binary and multi-level resistive switching modes.
Devices offer high-speed switching, multi-level storage, and excellent stability.
These memristors are suitable for logic, neuromorphic, and in-memory computing applications.