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Updated: Feb 23, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Non-uniform nanosecond gate-delay of hybrid pixel detectors
Roman Shayduk1, David Pennicard1, Konstantin Krausert1
1Deutsches Elektronen-Synchrotron (DESY), D-22603 Hamburg, Germany.
Abstract:
A simple experiment to characterize the gating properties of X-ray area detectors using pulsed X-ray sources is presented. For a number of time-resolved experiments the gating uniformity of area detectors is important. Relative gating delays between individual modules and readout chips of PILATUS2 series area X-ray detectors have been observed. For three modules of a PILATUS 300K-W unit the maximum gating offset between the modules is found to be as large as 30 ns. On average, the first photosensor module is found to be triggered 15 ns and 30 ns later than the second and the third modules, respectively.

