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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
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InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range
H A Fonseka1, A S Ameruddin, P Caroff
1Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia. a.fonseka.1@warwick.ac.uk CaroffP@cardiff.ac.uk.
Nanoscale
|September 6, 2017
Summary
Indium phosphide-indium gallium arsenide nanowire quantum wells show bright room-temperature emission. This material system is tunable for optical communication devices.
Area of Science:
- Semiconductor Nanostructures
- Optoelectronics
- Materials Science
Background:
- Nanowire-based quantum wells (QWs) are crucial for advanced optical devices.
- The InP-InGaAs material system offers potential for tunable optoelectronic applications.
Purpose of the Study:
- To assess the usability and tunability of InP-InGaAs nanowire QWs.
- To demonstrate their suitability for optical communication wavelengths.
Main Methods:
- Characterization using cross-section transmission electron microscopy (TEM).
- Photoluminescence (PL) measurements at room temperature.
- Simulations to support experimental emission wavelength data.
Main Results:
- Sharp InP-InGaAs interfaces and diffused InGaAs-InP interfaces observed.
- Bright room-temperature emission from nanowire QWs, tunable from 1.3-1.55 μm.
- Successful design of multiple QWs with bright emission.
Conclusions:
- The InP-InGaAs nanowire QW system is highly capable for optical device applications.
- Tunability achieved through varying QW thickness and composition.
- Demonstrated potential for telecommunication wavelength applications.
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