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Active Control of Charge Density Waves at Degenerate Semiconductor Interfaces
Raj K Vinnakota1, Dentcho A Genov2
1College of Engineering and Science, Louisiana Tech University, Ruston, USA.
Scientific Reports
|September 9, 2017
Summary
This study introduces an optoelectronic switch for plasmonic circuits using Surface Plasmon Polaritons (SPPs). Indium Gallium Arsenide enables high-speed, compact devices, bridging electronic and photonic technologies.
Area of Science:
- Optoelectronics
- Plasmonics
- Semiconductor Devices
Background:
- Surface Plasmon Polaritons (SPPs) are crucial for nanoscale light manipulation.
- Developing efficient optoelectronic switches is key for integrated photonic circuits.
Purpose of the Study:
- To present a novel optoelectronic switch for plasmonic circuits.
- To investigate the active control of SPPs at PN+ junctions.
- To identify optimal semiconductor materials for device implementation.
Main Methods:
- Self-consistent multi-physics simulations (electromagnetic, thermal, IV characteristics).
- Comparative analysis of Indium Gallium Arsenide (In0.53Ga0.47As) versus Silicon (Si).
Main Results:
- In0.53Ga0.47As offers superior optical confinement, reduced size, and faster operation compared to Si.
- The proposed device achieves signal modulation > -100 dB and responsivity > -600 dB·V−1.
- Switching rates up to 50 GHz demonstrated.
Conclusions:
- The developed optoelectronic switch shows significant potential for high-performance plasmonic circuits.
- Indium Gallium Arsenide is a promising material for practical device realization.
- This work offers a new approach to integrate electronic and photonic functionalities.
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