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Strong second harmonic generation in two-dimensional ferroelectric IV-monochalcogenides
Suman Raj Panday1, Benjamin M Fregoso1
1Department of Physics, Kent State University, Kent, OH 44242, United States of America.
Two-dimensional ferroelectric materials like GeS, GeSe, SnS, and SnSe exhibit significant electric polarization and shift-current effects. These properties lead to exceptionally large second harmonic generation, making them ideal for advanced optoelectronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Optoelectronics
Background:
- Two-dimensional (2D) ferroelectrics are materials with spontaneous electric polarization.
- GeS, GeSe, SnS, and SnSe are 2D materials with potential for unique electronic and optical properties.
- Enhanced shift-current response is desirable for non-linear optical applications.
Purpose of the Study:
- To investigate the second harmonic generation (SHG) properties of 2D ferroelectrics GeS, GeSe, SnS, and SnSe.
- To compare the SHG response of these materials with existing benchmarks like GaAs.
- To understand the relationship between shift-current response and SHG in these materials.
Main Methods:
- Density functional theory (DFT) calculations were employed to model the electronic and optical properties.
- A one-dimensional two-band model was used to analyze the optical response along the polarization direction.
- Effective second harmonic generation coefficients were calculated.
Main Results:
- GeS, GeSe, SnS, and SnSe exhibit the largest effective second harmonic generation (SHG) reported to date.
- The SHG magnitudes can reach up to [Formula: see text], an order of magnitude greater than GaAs.
- A direct proportionality was found between the shift-current response and the SHG tensor within the model.
Conclusions:
- The investigated 2D ferroelectrics possess exceptional SHG properties.
- Their large shift-current and SHG responses make them highly promising for non-linear optical and optoelectronic applications.
- These materials offer a new avenue for developing advanced photonic devices.
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