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Room-temperature 2D semiconductor activated vertical-cavity surface-emitting lasers

Jingzhi Shang1,2, Chunxiao Cong3, Zilong Wang2

  • 1NanjingTech-NTU Joint Center of Research and Development, Nanjing Tech University, Nanjing, 211816, China.

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|September 16, 2017
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Room-temperature lasing from two-dimensional (2D) semiconductors is now possible in vertical-cavity surface-emitting lasers (VCSELs). This breakthrough enables practical 2D semiconductor lasers for on-chip optical applications.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Semiconductor Physics

Background:

  • Two-dimensional (2D) semiconductors offer a novel platform for advanced optoelectronic devices.
  • Realizing room-temperature lasing in 2D materials is crucial for on-chip optical applications like interconnects and supercomputing.

Purpose of the Study:

  • To demonstrate room-temperature, low-threshold lasing from 2D semiconductor-activated vertical-cavity surface-emitting lasers (VCSELs).
  • To explore the potential of 2D materials for practical on-chip laser applications.

Main Methods:

  • Utilized dielectric oxides for constructing a half-wavelength-thick cavity and distributed Bragg reflectors for single-mode operation and ultralow optical loss.
  • Embedded a direct-bandgap monolayer WS2 as the gain medium within the VCSEL cavity.
  • Employed continuous-wave pumping for laser activation.

Main Results:

  • Achieved room-temperature, low-threshold lasing from 2D semiconductor-activated VCSELs.
  • Demonstrated 2D lasing characteristics originating from the 2D semiconductor gain medium.
  • Confirmed desirable emission characteristics from the fabricated VCSELs.

Conclusions:

  • This work represents a significant advancement towards practical optoelectronic applications of 2D semiconductor lasers.
  • The developed 2D semiconductor-activated VCSELs are compatible with planar configurations and monolithic integration.
  • The findings pave the way for next-generation on-chip optical technologies.