Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

1.6K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.6K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

698
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
698
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Metallic charge transport in conjugated molecular bilayers.

Nature electronics·2026
Same author

Charge and Spin Transport in Doped Rubrene Thin-Film Crystals.

ACS nano·2026
Same author

Toward a Consensus Characterization Protocol for Organic Thermoelectrics.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Picosecond quantum transients in halide perovskite nanodomain superlattices.

Nature nanotechnology·2025
Same author

Long spin lifetimes of charge carriers in rubrene crystals due to fast transient-localization motion.

Nature communications·2025
Same author

Defect-tolerant electron and defect-sensitive phonon transport in quasi-2D conjugated coordination polymers.

Nature communications·2025

Related Experiment Video

Updated: Feb 22, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

8.0K

Controlling Molecular Doping in Organic Semiconductors.

Ian E Jacobs1, Adam J Moulé2

  • 1Department of Materials Science, University of California, Davis, 1 Shields Avenue, Davis, CA, 95616, USA.

Advanced Materials (Deerfield Beach, Fla.)
|September 19, 2017
PubMed
Summary

Molecular doping of organic semiconductors enables low-cost electronics. Solution-processing techniques control dopant distribution, influencing material properties and device performance for advanced applications.

Keywords:
molecular dopingmorphologyorganic electronicsorganic semiconductorpolymer patterning

More Related Videos

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer
08:29

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer

Published on: January 10, 2017

9.5K
Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids
08:04

Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids

Published on: May 27, 2020

9.0K

Related Experiment Videos

Last Updated: Feb 22, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

8.0K
Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer
08:29

Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer

Published on: January 10, 2017

9.5K
Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids
08:04

Excitonic Hamiltonians for Calculating Optical Absorption Spectra and Optoelectronic Properties of Molecular Aggregates and Solids

Published on: May 27, 2020

9.0K

Area of Science:

  • Organic electronics
  • Materials science
  • Semiconductor physics

Background:

  • Organic electronics offer unique properties but require controllable doping for advanced applications.
  • Molecular doping is crucial for achieving desired electronic and mechanical characteristics in organic semiconductors.
  • Solution-processing techniques present opportunities for precise control over doping in organic materials.

Purpose of the Study:

  • To summarize recent advancements in molecular doping of organic semiconductors.
  • To emphasize the role of solution-processed p-type doped polymeric semiconductors.
  • To explore how processing techniques influence dopant behavior and material properties.

Main Methods:

  • Review of recent research in molecular doping of organic semiconductors.
  • Analysis of solution-processing techniques for controlling dopant distribution, diffusion, and density.
  • Investigation of the relationship between fabrication techniques, film morphology, and electronic properties.

Main Results:

  • Solution-processing allows control over dopant behavior, impacting electronic properties.
  • Advances in synthesis and understanding of charged states have intensified research.
  • Disorder and doping-morphology interactions can lead to charge trapping and reduced doping efficiency.

Conclusions:

  • The interplay between doping, solubility, and morphology can be leveraged for material control.
  • Molecular doping offers pathways to control crystallinity, create doping gradients, and pattern polymers.
  • Molecular doping has potential applications beyond traditional inorganic doping analogies in device fabrication.