Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Valence Bond Theory02:42

Valence Bond Theory

11.4K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

880
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
880
Network Covalent Solids02:18

Network Covalent Solids

16.3K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
16.3K
Fermi Level Dynamics01:12

Fermi Level Dynamics

817
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
817
Molecular Orbital Theory II03:51

Molecular Orbital Theory II

27.8K
Molecular Orbital Energy Diagrams
27.8K
Resonance and Hybrid Structures02:16

Resonance and Hybrid Structures

27.7K
According to the theory of resonance, if two or more Lewis structures with the same arrangement of atoms can be written for a molecule, ion, or radical, the actual distribution of electrons is an average of that shown by the various Lewis structures.
Resonance Structures and Resonance Hybrids
The Lewis structure of a nitrite anion (NO2−) may actually be drawn in two different ways, distinguished by the locations of the N–O and N=O bonds.
27.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Expert consensus on surgical management of unilateral Wilms tumor (2025).

World journal of pediatric surgery·2026
Same author

Development of an Interpretable Machine Learning Model for Predicting Clavien-Dindo Grade ≥2 Complications after Unilateral Minimally Invasive Pyeloplasty in UPJO: A Retrospective Cohort Study.

Journal of endourology·2026
Same author

Dual metabolic intervention nanoplatform co-delivering BAY-876 and L-cystine for Wilms tumor therapy via disulfidptosis-associated cytoskeletal collapse.

Journal of nanobiotechnology·2026
Same author

Recovery of ureteral dilation following laparoscopic Lich-Gregoir anti-reflux surgery for moderate/severe vesicoureteral reflux in children.

Journal of pediatric urology·2026
Same author

Clinical Trajectory and Predictors of Conservative Management Failure in Primary Vesicoureteral Reflux With a History of Urinary Tract Infection: A Retrospective Cohort Study and Nomogram Development.

Urology·2026
Same author

Factors affecting the spontaneous resolution of pediatric primary hydrocele: a cohort study of children aged 0-12 years and development of a clinical prediction model.

BMC pediatrics·2026

Related Experiment Video

Updated: Feb 22, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.1K

Electron dynamics in MoS2-graphite heterostructures.

Xinwu Zhang1, Dawei He, Lixin Yi

  • 1Key laboratory of Luminescence and Optical Information, Ministry of education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China. lxyi@bjtu.edu.cn yshwang@bjtu.edu.cn.

Nanoscale
|September 21, 2017
PubMed
Summary

Electron dynamics in MoS2-graphite heterostructures were studied. Monolayer MoS2 shows ultrafast charge transfer (<400 fs) to graphite, crucial for high-performance optoelectronics.

More Related Videos

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.6K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

Related Experiment Videos

Last Updated: Feb 22, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

1.1K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.6K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Heterostructures combining transition metal dichalcogenides (TMDs) like MoS2 with other 2D materials are promising for novel electronic applications.
  • Understanding charge carrier dynamics at the interface is critical for device optimization.

Purpose of the Study:

  • To investigate the electron dynamics and photocarrier transfer in MoS2-graphite heterostructures.
  • To compare charge transfer efficiency between monolayer and bulk MoS2 in conjunction with multilayer graphite.

Main Methods:

  • Fabrication of MoS2-graphite heterostructures using exfoliation and dry transfer.
  • Femtosecond transient absorption spectroscopy to probe ultrafast electron dynamics.
  • Time-resolved measurement of photocarrier transfer using differential reflection.

Main Results:

  • Ultrafast photocarrier transfer (<400 fs) observed from monolayer MoS2 to multilayer graphite.
  • Significantly slower photocarrier transfer (~220 ps) in bulk MoS2-graphite heterostructures.
  • Demonstrated control of MoS2 absorption coefficient via graphite carrier interactions.

Conclusions:

  • Efficient charge transfer in monolayer MoS2-graphite is key for advanced optoelectronic devices.
  • The findings provide insights into interlayer coupling and control mechanisms.
  • Results guide the development of MoS2-based heterostructure devices.