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Related Experiment Videos

Silicon single-photon avalanche diodes with nano-structured light trapping.

Kai Zang1, Xiao Jiang2,3, Yijie Huo4

  • 1Department of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA. kaizang@stanford.edu.

Nature Communications
|September 22, 2017
PubMed
Summary

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Researchers developed a new silicon single-photon avalanche detector that improves near-infrared detection efficiency without sacrificing timing precision. This breakthrough overcomes a key limitation in current photon detection technology.

Area of Science:

  • Photonics and Optoelectronics
  • Semiconductor Device Physics

Background:

  • Silicon single-photon avalanche detectors (Si SPADs) offer high signal-to-noise ratio, CMOS compatibility, and room-temperature operation.
  • A critical trade-off exists in Si SPADs, particularly for near-infrared wavelengths, between photon detection efficiency (PDE) and timing jitter.
  • Thick-junction devices exhibit good PDE but poor timing, while thin-junction devices show good timing but low PDE.

Purpose of the Study:

  • To overcome the inherent trade-off between PDE and timing jitter in Si SPADs.
  • To enhance the performance of Si SPADs, especially in the crucial near-infrared spectral region.
  • To introduce a practical and CMOS-compatible method for improving SPAD performance.

Main Methods:

  • Demonstration of a light-trapping, thin-junction Si single-photon avalanche diode (SPAD).

Related Experiment Videos

  • Utilizing nanostructured, thin-junction architecture for tailored light trapping.
  • Diffracting incident photons into a horizontal waveguide mode to increase absorption length.

    • Main Results:

    • Achieved a 2.5-fold improvement in photon detection efficiency in the near-infrared regime.
    • Maintained excellent timing jitter performance at 25 picoseconds.
    • Demonstrated a method that breaks the traditional PDE-timing jitter trade-off.

    Conclusions:

    • The developed light-trapping thin-junction Si SPAD effectively mitigates the PDE-timing jitter trade-off.
    • This CMOS-compatible approach offers a viable path for enhancing SPADs, image sensor arrays, and silicon photomultipliers.
    • The technology promises improved performance across a broad spectral range for various photon detection applications.