Related Experiment Video
Updated: Feb 22, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2
1Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, 70118, USA.
Researchers observed unique quantum transport in YbMnBi₂, a type II Weyl semimetal. This behavior stems from the zeroth Landau level (LL) of relativistic fermions, offering insights into topological quantum materials.
Area of Science:
- Condensed Matter Physics
- Quantum Materials Science
- Topological Materials
Background:
- Relativistic fermions in topological quantum materials exhibit linear energy-momentum dispersion.
- A unique zeroth Landau level (LL) arises from the Berry phase of π in cyclotron motion under magnetic fields, characteristic of relativistic fermions.
Purpose of the Study:
- To investigate the unusual interlayer quantum transport behavior in the time-reversal symmetry-breaking type II Weyl semimetal YbMnBi₂.
- To explore the role of the zeroth Landau level (LL) mode in the observed transport phenomena.
Main Methods:
- Experimental observation of interlayer magnetoresistivity and Hall conductivity in YbMnBi₂ under high magnetic fields.
- Theoretical modeling of interlayer quantum tunneling transport considering the zeroth LL's Weyl fermions.
Main Results:
- YbMnBi₂ exhibits surprising angular dependences in its interlayer magnetoresistivity and Hall conductivity.
- These angular dependences are well-fitted by a model incorporating interlayer quantum tunneling of zeroth LL Weyl fermions.
Conclusions:
- The study reveals the significant role of the zeroth Landau level (LL) mode in the quantum transport of type II Weyl semimetals.
- The findings provide new understanding of transport phenomena in topological quantum materials, particularly YbMnBi₂.
More Related Videos
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
10:36Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Related Concept Videos
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Types of Semiconductors
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
P-N junction