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Updated: Feb 22, 2026

Preparation of Carbon Nanosheets at Room Temperature
Published on: March 8, 2016
A tight binding and [Formula: see text] study of monolayer stanene
Liming Jiang1,2,3, Paolo Marconcini4, Md Sharafat Hossian1,2,3
1Centre for Neural Engineering, The University of Melbourne, 203 Bouverie St, Carlton, VIC 3053 Australia.
We developed an accurate tight-binding model for stanene, a single layer of tin atoms, crucial for quantum spin Hall applications. This model aids in future device transport calculations.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Stanene, a single atomic layer of tin, is an emerging material with potential for quantum spin Hall effect applications.
- Accurate theoretical models are essential for understanding and utilizing novel 2D materials like stanene.
Purpose of the Study:
- To develop an accurate tight-binding model for single-layer stanene near the Fermi level.
- To investigate the electronic properties of stanene, including the effects of spin-orbit coupling and atomic buckling.
Main Methods:
- Parameterization of onsite and hopping energies for nearest, second, and third nearest neighbors in a tight-binding model.
- Analytical derivation of electronic band structures at the Gamma and M points.
- Numerical investigation of buckling effects and fitting to ab-initio dispersion relations.
Main Results:
- An accurate tight-binding model for stanene was established, considering spin-orbit coupling.
- The electronic band structures at key reciprocal space points were derived analytically and numerically.
- The impact of atomic buckling on stanene's electronic properties was investigated.
Conclusions:
- The developed tight-binding model provides a robust foundation for atomistic device transport calculations in stanene.
- This work facilitates further research into stanene-based quantum spin Hall devices.
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