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Interface Energy Coupling between β-tungsten Nanofilm and Few-layered Graphene
Meng Han1, Pengyu Yuan1, Jing Liu1
1Department of Mechanical Engineering, Iowa State University, 2010 Black Engineering Building, Ames, IA, 50011, USA.
Scientific Reports
|September 24, 2017
Summary
We measured thermal conductance in few-layered graphene (G) between beta-phase tungsten (β-W) films. The graphene/tungsten interface shows strong energy coupling, indicating efficient heat transfer.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Tungsten (W) exhibits different phases (α and β) with distinct properties.
- Graphene (G) is known for its exceptional thermal conductivity.
- Understanding interfacial thermal transport is crucial for thermal management in electronic devices.
Purpose of the Study:
- To quantify the thermal conductance of β-phase tungsten (β-W) films.
- To characterize the thermal conductance at the β-W/graphene (G) interface.
- To compare the thermal properties of β-W/G interfaces with existing literature.
Main Methods:
- Fabrication of multilayered structures with β-W films and few-layered graphene.
- Differential characterization to isolate film and interface thermal conductance.
- Measurement of cross-plane thermal conductivity and interface thermal conductance.
Main Results:
- The thermal conductivity of β-W films was found to be significantly low (1.69–2.41 Wm⁻¹K⁻¹).
- The β-W/β-W interface thermal conductance averaged 280 MWm⁻²K⁻¹.
- The β-W/G interface thermal conductance had a lower limit of 84 MWm⁻²K⁻¹, indicating efficient energy coupling.
Conclusions:
- β-W exhibits poor thermal conductivity, consistent with its high electrical resistivity.
- The β-W/G interface demonstrates high thermal conductance, suggesting potential for thermal management applications.
- Variations in β-W/G interface conductance are attributed to fabrication imperfections.

