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Updated: Feb 22, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Yusuke Sekimoto1, Ryo Ohtani1, Masaaki Nakamura1
1Department of Chemistry, Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto, 860-8555, Japan.
Pressure effects were tuned by altering interlayer distances in graphene oxide (GO) and reduced graphene oxide (rGO) layers. This tuning influenced the spin-crossover (SCO) temperature of incorporated iron-based nanoparticles (NPs).
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