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Updated: Feb 22, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Tuning magnetoresistance in molybdenum disulphide and graphene using a molecular spin transition
Subhadeep Datta1,2, Yongqing Cai3, Indra Yudhistira4
1SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
Abstract:
Coupling spins of molecular magnets to two-dimensional (2D) materials provides a framework to manipulate the magneto-conductance of 2D materials. However, with most molecules, the spin coupling is usually weak and devices fabricated from these require operation at low temperatures, which prevents practical applications. Here, we demonstrate field-effect transistors based on the coupling of a magnetic molecule quinoidal dithienyl perylenequinodimethane (QDTP) to 2D materials. Uniquely, QDTP switches from a spin-singlet state at low temperature to a spin-triplet state above 370 K, and the spin transition can be electrically transduced by both graphene and molybdenum disulphide. Graphene-QDTP shows hole-doping and a large positive magnetoresistance ( ~ 50%), while molybdenum disulphide-QDTP demonstrates electron-doping and a switch to large negative magnetoresistance ( ~ 100%) above the magnetic transition. Our work shows the promise of spin detection at high temperature by coupling 2D materials and molecular magnets.Engineering a coupling between magnetic molecules and conducting materials at room temperature could help the development of spintronic devices. Loh et al. show that the spin state of QDTP molecules deposited on graphene and MoS2 couples to their electronic structure, affecting magnetotransport.
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