Tuning magnetoresistance in molybdenum disulphide and graphene using a molecular spin transition

Subhadeep Datta1,2, Yongqing Cai3, Indra Yudhistira4

  • 1SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.

Nature Communications
|September 24, 2017
PubMed

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