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Application of CMOS Technology to Silicon Photomultiplier Sensors
Nicola D'Ascenzo1, Xi Zhang2, Qingguo Xie3
1School of life science and technology, Huazhong University of Science and Technology, Wuhan 430073, China. ndasc@hust.edu.cn.
Abstract:
We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.
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