Related Experiment Video
Updated: Feb 22, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Electric Field Manipulated Multilevel Magnetic States Storage in FePt/(011) PMN-PT Heterostructure
Xiaoyu Zhao1, Jiahong Wen1, Bo Yang2
1National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory for Nanotechnology and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
Abstract:
In the current information society, the realization of a magnetic storage technique with energy-efficient design and high storage density is greatly desirable. Here, we demonstrate that, without bias magnetic field, different values of remanent magnetization (Mr) can be obtained in a FePt/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) heterostructure by applying a unipolar electric field across the substrate. These multilevel magnetic signals can serve as writing data bits in a storage device, which remarkably increases the storage density. As for the data reading, these multilevel Mr values can be read nondestructively and distinguishably using a commercial giant magnetoresistance magnetic sensor by converting the magnetic signal to voltage signal. Furthermore, these multilevel voltage signals show good retention and switching property, which enables promising applications in electric-writing magnetic-reading memory devices with low power consumption and high storage density.
Related Concept Videos
Ferromagnetism
Atomic Nuclei: Nuclear Spin State Overview
Magnetic Fields
A magnetic field is defined by the force that a charged particle experiences...
Field Effect Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Paramagnetism

