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Hole dephasing caused by hole-hole interaction in a multilayered black phosphorus
Lijun Li1, Muhammad Atif Khan1, Yoontae Lee1
1School of Electronic and Electrical Engineering and Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 16419, Republic of Korea.
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We study the magnetotransport of holes in a multilayered black phosphorus in a temperature range of 1.9 to 21.5 K. We observed a negative magnetoresistance at magnetic fields up to 1.5 T. This negative magetoresistance was analyzed by weak localization theory in diffusive regime. At the lowest temperature and the highest carrier density we found a phase coherence length of 48 nm. The linear temperature dependence of the dephasing rate shows that the hole-hole scattering processes with small energy transfer are the dominant contribution in breaking the carrier phase coherence.
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