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Room-Temperature Spin Polariton Diode Laser.

Aniruddha Bhattacharya1, Md Zunaid Baten1, Ivan Iorsh2

  • 1Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122, USA.

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|September 27, 2017
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Summary
This summary is machine-generated.

Researchers demonstrated spin-polarized electron injection in a GaN microcavity polariton laser, achieving ~25% circular polarization. This advance offers enhanced control over laser output polarization at room temperature.

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Area of Science:

  • Semiconductor physics
  • Optoelectronics
  • Spintronics

Background:

  • Spin-polarized lasers offer inherent control of output circular polarization.
  • Microcavity polariton lasers combine exciton and photon properties for unique light-matter interactions.

Purpose of the Study:

  • To investigate the polarization characteristics of a bulk GaN-based microcavity polariton diode laser.
  • To achieve electrical injection of spin-polarized electrons using a FeCo/MgO spin injector at room temperature.
  • To analyze the impact of spin-polarized current on polariton laser operation and output polarization.

Main Methods:

  • Fabrication and characterization of a bulk GaN-based microcavity polariton diode laser.
  • Electrical injection of spin-polarized electrons using a FeCo/MgO spin injector.
  • Measurement of light-current characteristics, electroluminescence linewidth, emission peak shift, and output circular polarization.
  • Analysis using carrier and exciton rate equations and Gross-Pitaevskii equations.

Main Results:

  • Polariton laser operation observed with a threshold of ~69 A/cm² under spin-polarized current.
  • Significant reduction in electroluminescence linewidth and a blueshift of the emission peak.
  • Achieved a degree of output circular polarization of ~25% under remanent magnetization.
  • Identified a second threshold at ~7.2 kA/cm² corresponding to conventional photon lasing.
  • Good agreement between experimental measurements and theoretical calculations.

Conclusions:

  • Electrical injection of spin-polarized electrons enables control over the output polarization of GaN-based microcavity polariton lasers.
  • The study demonstrates the potential for spintronic control in semiconductor lasers.
  • The findings are supported by theoretical modeling, validating the underlying physics.