Probing Electron Spin Resonance in Monolayer Graphene.

Area of Science:

• Condensed matter physics
• Materials science
• Spintronics

Background:

• The electron g factor in graphene is critical for understanding and utilizing spin-related phenomena.
• Graphene's unique electronic properties make it a promising material for spintronic applications.

Purpose of the Study:

• To precisely determine the g factor of monolayer graphene on a silicon/silicon dioxide substrate.
• To investigate the influence of charge carrier properties on the graphene g factor.

Main Methods:

• Resistively detected electron spin resonance (RESR) was employed.
• Monolayer graphene samples on Si/SiO_{2} substrates were utilized.

Main Results:

• The magnetic moment and g factor of graphene were measured to be 1.952±0.002.
• The g factor demonstrated remarkable insensitivity to variations in charge carrier type, concentration, and mobility.

Conclusions:

• The determined g factor is a fundamental property of graphene, largely independent of common charge carrier variations.
• This finding has significant implications for the design and control of spintronic devices based on graphene.