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Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators
Lingjie Du1, Tingxin Li1,2, Wenkai Lou3
1Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA.
Abstract:
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z_{2} topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
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