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Synthesis of Monodisperse Cylindrical Nanoparticles via Crystallization-driven Self-assembly of Biodegradable Block Copolymers
Published on: June 20, 2019
Carbohydrate-based block copolymer systems: directed self-assembly for nanolithography applications.
I Otsuka1, N Nilsson, D B Suyatin
1Univ. Grenoble Alpes, CNRS, CERMAV, 38000 Grenoble, France. borsali@cermav.cnrs.fr.
Directed self-assembly of maltoheptaose-block-polystyrene block copolymers (BCPs) enables sub-10 nm nanolithography. This study demonstrates successful graphoepitaxy and pattern transfer for advanced nanoscale fabrication.
Area of Science:
- Nanoscience and Nanotechnology
- Materials Science
- Polymer Chemistry
Background:
- Block copolymers (BCPs) offer a promising route for nanolithography, particularly for creating structures below 10 nm.
- Directed self-assembly (DSA) and pattern transfer are critical challenges for BCPs at these small scales.
Purpose of the Study:
- To demonstrate directed self-assembly (DSA) of a maltoheptaose-block-polystyrene (MH-b-PS) BCP system using graphoepitaxy for sub-10 nm nanolithography.
- To investigate the self-organization behavior and pattern transfer capabilities of the MH-b-PS BCP.
Main Methods:
- Utilized graphoepitaxy with guiding patterns created by electron beam lithography (EBL) and lift-off.
- Employed solvent vapor annealing in tetrahydrofuran (THF) and water for BCP self-organization.
- Analyzed BCP patterns using Atomic Force Microscopy (AFM) and evaluated etch selectivity using Reactive Ion Etching (RIE).
Main Results:
- Achieved sub-10 nm scale cylinder formation of the maltoheptaose (MH) block within a polystyrene (PS) matrix.
- Demonstrated good ordering of vertical and horizontal cylindrical MH arrays via DSA for guiding patterns with 150-200 nm separation.
- Observed a significantly higher etch rate for MH (up to 14x) compared to PS using O2 and CF4 plasma in RIE.
Conclusions:
- The maltoheptaose-block-polystyrene (MH-b-PS) BCP system shows significant potential for nanolithographic applications below 10 nm.
- Successful DSA and differential etch rates are key for fabricating high-resolution nanostructures.
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