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Memory characteristics of silicon nanowire transistors generated by weak impact ionization

Doohyeok Lim1, Minsuk Kim1, Yoonjoong Kim1

  • 1Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.

Scientific Reports
|October 1, 2017
PubMed

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