Related Experiment Video
Updated: Feb 21, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Exciton Hall effect in monolayer MoS2
Masaru Onga1, Yijin Zhang2,3, Toshiya Ideue1
1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.
Abstract:
The spontaneous Hall effect driven by the quantum Berry phase (which serves as an internal magnetic flux in momentum space) manifests the topological nature of quasiparticles and can be used to control the information flow, such as spin and valley. We report a Hall effect of excitons (fundamental composite particles of electrons and holes that dominate optical responses in semiconductors). By polarization-resolved photoluminescence mapping, we directly observed the Hall effect of excitons in monolayer MoS2 and valley-selective spatial transport of excitons on a micrometre scale. The Hall angle of excitons is found to be much larger than that of single electrons in monolayer MoS2 (ref. ), implying that the quantum transport of the composite particles is significantly affected by their internal structures. The present result not only poses a fundamental problem of the Hall effect in composite particles, but also offers a route to explore exciton-based valleytronics in two-dimensional materials.
Related Concept Videos
The Hall Effect
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Valence Bond Theory
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

