Activity Dependent Synaptic Plasticity Mimicked on Indium-Tin-Oxide Electric-Double-Layer Transistor

Area of Science:

• Solid-state materials science
• Neuromorphic engineering
• Condensed matter physics

Background:

• Ion coupling offers a method to tune electrical properties in solid-state materials.
• Protonic/electronic coupled devices are emerging for advanced electronic applications.

Purpose of the Study:

• To fabricate and characterize phosphorosilicate glass (PSG)-based electrolyte gated indium-tin-oxide electric-double-layer (EDL) transistors.
• To investigate the potential of these transistors as synaptic building blocks for neuromorphic systems.

Main Methods:

• Fabrication of EDL transistors using phosphorosilicate glass electrolyte and indium-tin-oxide channel.
• Utilizing strong proton gating behavior for enhanced transistor performance.
• Employing interfacial electrochemical doping to modulate channel conductance and synaptic weights.

Main Results:

• The fabricated oxide EDL transistors demonstrated good electrical performance attributed to effective proton gating.
• Channel conductance was successfully regulated to different levels, simulating distinct initial synaptic weights.
• Demonstrated activity-dependent synaptic responses including excitatory postsynaptic current and paired-pulse facilitation.

Conclusions:

• Proton conductor gated oxide EDL synaptic transistors exhibit tunable, activity-dependent synaptic plasticity.
• These transistors show promise as fundamental components for future neuromorphic computing systems.