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Boron-Stabilized Planar Neutral π-Radicals with Well-Balanced Ambipolar Charge-Transport Properties
Tomokatsu Kushida1, Shusuke Shirai1, Naoki Ando1
1Department of Chemistry, Graduate School of Science, Integrated Research Consortium on Chemical Sciences (IRCCS), and Institute of Transformative Bio-Molecules (WPI-ITbM), Nagoya University , Furo, Chikusa, Nagoya 464-8602, Japan.
Abstract:
Organic neutral π-monoradicals are promising semiconductors with balanced ambipolar carrier-transport abilities, which arise from virtually identical spatial distribution of their singly occupied and unoccupied molecular orbitals, SOMO(α) and SOMO(β), respectively. Herein, we disclose a boron-stabilized triphenylmethyl radical that shows outstanding thermal stability and resistance toward atmospheric conditions due to the substantial spin delocalization. The radical is used to fabricate organic Mott-insulator transistors that operate at room temperature, wherein the radical exhibits well-balanced ambipolar carrier transport properties.
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