Robust and Selective Switching of an Fe^III Spin-Crossover Compound on Cu₂N/Cu(100) with Memristance Behavior

The switching between two spin states makes spin-crossover molecules on surfaces very attractive for potential applications in molecular spintronics. Using scanning tunneling microscopy, the successful deposition of [Fe(pap)₂]⁺ (pap = N-2-pyridylmethylidene-2-hydroxyphenylaminato) molecules on Cu₂N/Cu(100) surface is evidenced. The deposited Fe^III spin-crossover compound is controllably switched between three different states, each of them exhibiting a characteristic tunneling conductance. The conductance is therefore employed to readily read the state of the molecules. A comparison of the experimental data with the results of density functional theory calculations reveals that all Fe(pap)₂ molecules are initially in their high-spin state. The two other states are compatible with the low-spin state of the molecule but differ with respect to their coupling to the substrate. As a proof of concept, the reversible and selective nature of the switching is used to build a two-molecule memory.