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Dynamic annealing in Ge studied by pulsed ion beams.
J B Wallace1,2, L B Bayu Aji3, L Shao4
1Lawrence Livermore National Laboratory, Livermore, California, 94550, USA. josey.wallace@gmail.com.
Scientific Reports
|October 15, 2017
Summary
Radiation damage in germanium (Ge) above room temperature involves complex annealing. This study reveals a critical transition temperature around 130°C, altering dominant dynamic annealing processes and their activation energies.
Area of Science:
- Materials Science
- Solid State Physics
- Ion Beam Modification of Materials
Background:
- Radiation damage in germanium (Ge) above room temperature is governed by dynamic annealing of point defects.
- Understanding these processes is crucial for predicting material behavior under irradiation.
Purpose of the Study:
- To investigate the dynamics of radiation defects in Ge under pulsed ion beam irradiation.
- To determine the characteristic time constants and diffusion lengths of dynamic annealing processes.
- To identify critical temperatures and activation energies governing defect annealing.
Main Methods:
- Pulsed 500 keV Argon (Ar) ion beam irradiation of Ge at temperatures between 100-160°C.
- Varying the beam duty cycle (passive and active portions) to probe annealing dynamics.
- Measuring characteristic time constants and effective diffusion lengths.
Main Results:
- A characteristic time constant for dynamic annealing decreased from ~8 ms to 0.3 ms with increasing temperature.
- An effective diffusion length of ~38 nm was measured at 110°C.
- A critical transition temperature of ~130°C was identified, marking a change in dominant annealing mechanisms.
- Two dominant dynamic annealing processes with activation energies of 0.13 eV and 1.3 eV were observed.
Conclusions:
- Dynamic annealing in Ge exhibits complex temperature-dependent behavior.
- A significant shift in the dominant defect annealing mechanism occurs around 130°C.
- The distinct activation energies suggest different defect migration or interaction pathways become dominant above and below this transition temperature.
