Spin independent magnetoresistance effects in vertical graphene spin valves

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Srikrishna Bodepudi1, Abhay Pratap Singh1, Sandipan Pramanik1

  • 1Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 2V4, Canada.

Nanotechnology
|October 17, 2017
PubMed

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