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Related Experiment Videos

Piezotronic effect tuned AlGaN/GaN high electron mobility transistor.

Chunyan Jiang1, Ting Liu1, Chunhua Du1

  • 1Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing 100083, People's Republic of China.

Nanotechnology
|October 18, 2017
PubMed
Summary

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This study demonstrates that applying stress to AlGaN/GaN high electron mobility transistors (HEMTs) enhances carrier transport and device performance. The piezotronic effect, using strain-induced charges, boosts current by up to 21%.

Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Nanotechnology

Background:

  • The piezotronic effect leverages strain-induced piezoelectric polarization charges to modulate carrier transport at interfaces.
  • High electron mobility transistors (HEMTs) are crucial in modern electronics, but their performance can be limited.

Purpose of the Study:

  • To investigate the impact of external stress on AlGaN/GaN HEMTs.
  • To demonstrate the enhancement of HEMT transport properties through the piezotronic effect.
  • To elucidate the underlying physical mechanisms.

Main Methods:

  • Fabrication of high-performance AlGaN/GaN HEMTs.
  • Application of external compressive stress to the HEMT device.
  • Measurement of source-drain current and saturation current under varying gate voltages and stress levels.

Related Experiment Videos

  • Theoretical analysis using self-consistent solutions of the Schrödinger-Poisson equations.

    • Main Results:

    • External stress was applied to AlGaN/GaN HEMTs for the first time, enhancing their transport properties.
    • Source-drain current enhancement was observed across all gate voltages.
    • A maximum saturation current enhancement of 21% was achieved with 15 N applied stress (0.18 GPa).
    • The physical mechanism linking piezoelectric polarization and 2D electron gas formation under stress was confirmed.

    Conclusions:

    • The piezotronic effect offers a tunable method to enhance HEMT performance.
    • Strain engineering provides a viable pathway for improving semiconductor device characteristics.
    • Strained HEMTs hold potential for applications in human-machine interfaces and power system security.