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Compact tunable electromagnetically induced transparency and Fano resonance on silicon platform
Optics Express
|October 19, 2017
Summary
We demonstrate an on-chip system generating electromagnetically induced transparency (EIT)-like effects and Fano resonances on silicon. This silicon photonics device offers tunable Fano resonances with high extinction ratios and slope rates.
Area of Science:
- Photonics
- Optical Engineering
- Materials Science
Background:
- Electromagnetically induced transparency (EIT) and Fano resonances are crucial quantum interference phenomena.
- On-chip implementation of these effects is vital for integrated photonic devices.
Purpose of the Study:
- To propose and demonstrate an on-chip coupling resonant system for generating EIT-like effects and Fano resonances.
- To investigate the influence of microring resonator coupling conditions on resonance phenomena.
- To achieve tunable Fano resonances on a silicon platform.
Main Methods:
- Fabrication of an on-chip system comprising a microring resonator (MRR) and cascaded Sagnac-loop mirrors (SLMs) assisted Fabry-Perot (FP) cavity.
- Theoretical analysis of MRR coupling conditions (over-coupling for EIT-like, under-coupling for Fano resonance).
- Experimental demonstration using an add-drop MRR under coupled conditions, with thermal-optic tuning via a micro-heater.
Main Results:
- Observed Fano resonances with a sharp asymmetric line shape under the under-coupling condition.
- Achieved maximum extinction ratio (ER) of 23.22 dB and maximum slope rate (SR) of 252 dB/nm for Fano resonances.
- Demonstrated wide wavelength tunability of Fano resonances with a tuning efficiency of 0.2335 nm/mW.
Conclusions:
- The proposed on-chip system successfully generates EIT-like effects and Fano resonances on a silicon platform.
- The system allows for dynamic tuning of Fano resonance wavelengths, enabling practical applications.
- The achieved high ER and SR highlight the potential of this silicon photonics approach.
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