Related Experiment Video

Updated: Feb 20, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
13:44

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

16.0K

Degenerate critical coupling in all-dielectric metasurface absorbers

Xianshun Ming, Xinyu Liu, Liqun Sun

    Optics Express
    |October 19, 2017
    PubMed

    More Related Videos

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces09:33

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

    Published on: June 7, 2019

    6.7K
    Characterizing Dissipative Elastic Metamaterials Produced by Additive Manufacturing09:39

    Characterizing Dissipative Elastic Metamaterials Produced by Additive Manufacturing

    Published on: June 28, 2024

    1.6K

    Related Concept Videos

    Electrostatic Boundary Conditions in Dielectrics01:27

    Electrostatic Boundary Conditions in Dielectrics

    When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
    Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
    1.9K
    Dielectric Polarization in a Capacitor01:31

    Dielectric Polarization in a Capacitor

    The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
    6.1K
    Magnetostatic Boundary Conditions01:28

    Magnetostatic Boundary Conditions

    An electric field suffers a discontinuity at a surface charge. Similarly, a magnetic field is discontinuous at a surface current. The perpendicular component of a magnetic field is continuous across the interface of two magnetic mediums. In contrast, its parallel component, perpendicular to the current, is discontinuous by the amount equal to the product of the vacuum permeability and the surface current. Like the scalar potential in electrostatics, the vector potential is also continuous...
    1.7K
    Capacitor With A Dielectric01:18

    Capacitor With A Dielectric

    Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
    Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
    5.0K
    Susceptibility, Permittivity and Dielectric Constant01:26

    Susceptibility, Permittivity and Dielectric Constant

    When placed in an external electric field, a dielectric material gets polarized. The charge density in the dielectric material is given by the sum of the bound and free charge densities, while the total charge density can also be written in terms of the total electric field. The bound charge density can be measured in terms of polarization, leading to the relationship between electric displacement and polarization.
    3.2K
    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
    686