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Related Experiment Videos

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.

Xiao-Xi Li1,2, Zhi-Qiang Fan3, Pei-Zhi Liu4

  • 1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.

Nature Communications
|October 19, 2017
PubMed

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Summary
This summary is machine-generated.

Researchers developed a new fabrication method for 2D semiconducting materials, enabling advanced nanoelectronics. This technique suppresses barriers in molybdenum disulfide (MoS2) transistors, paving the way for future logic devices.

Area of Science:

  • Materials Science
  • Nanoscience
  • Condensed Matter Physics

Background:

  • Atomically thin two-dimensional (2D) semiconducting materials in van der Waals heterostructures are crucial for next-generation nanoelectronics.
  • Integration challenges, such as Schottky barriers and Fermi level pinning, hinder their application in logic devices.

Purpose of the Study:

  • To devise a fabrication technique for overcoming integration challenges in 2D material-based nanoelectronic devices.
  • To enable homogeneous gate control and reversible diode behavior in molybdenum disulfide (MoS2) transistors.

Main Methods:

  • A reverted stacking technique was employed to introduce a boron nitride (BN) tunnel layer between the MoS2 channel and electrodes.
  • Vertical electron tunneling was utilized to suppress Schottky barriers and Fermi level pinning.

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Main Results:

  • The developed method resulted in homogeneous gate control of the MoS2 channel's chemical potential.
  • Ambipolar pn to np diode behavior was observed and could be reversibly tuned by the gate.

Conclusions:

  • The fabrication technique enables the suppression of Schottky barriers and Fermi level pinning in 2D material heterostructures.
  • The demonstrated gate-tunable, reversible diode behavior is promising for future logic applications and high-performance switches.