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Related Concept Videos

Semiconductors01:22

Semiconductors

1.6K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.1K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

686
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
686
Types of Semiconductors01:20

Types of Semiconductors

1.5K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.5K
P-N junction01:11

P-N junction

1.4K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.4K
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

1.7K
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
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Related Experiment Video

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Coherent coupling between a quantum dot and a donor in silicon.

Patrick Harvey-Collard1,2, N Tobias Jacobson3, Martin Rudolph4

  • 1Département de Physique et Institut Quantique, Université de Sherbrooke, Sherbrooke, QC, Canada, J1K 2R1. p.collard@usherbrooke.ca.

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|October 19, 2017
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Summary

Researchers demonstrate a new method for creating compact two-electron spin qubits. This advance uses a single quantum dot and a phosphorus-31 donor, enabling coherent control for quantum computing applications.

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Area of Science:

  • Quantum Computing
  • Solid-State Physics
  • Materials Science

Background:

  • Individual donors in silicon offer low error rates for quantum bits (qubits).
  • Fabrication challenges due to atomic size limit single donor realizations.
  • Quantum dot qubits are adjustable via electrical gate voltages, enabling coupling to donors.

Purpose of the Study:

  • To demonstrate the coherent interaction between a 31P donor electron and a quantum dot electron.
  • To develop a compact two-electron spin qubit system.
  • To explore nuclear spin control of electronic qubit states.

Main Methods:

  • Fabrication of a metal-oxide-semiconductor quantum dot.
  • Coherent coupling of a 31P donor electron to a quantum dot electron.
  • Encoding a logical qubit in the spin singlet and triplet states of the two-electron system.

Main Results:

  • Demonstrated coherent interaction between the donor electron and quantum dot electron.
  • Successfully formed a logical qubit using the two-electron system.
  • Showcased donor nuclear spin driving coherent rotations of electronic qubit states via hyperfine interaction.

Conclusions:

  • The study provides key elements for compact two-electron spin qubits using a single dot.
  • Eliminates the need for additional magnetic field gradients.
  • Offers a method for interacting with the nuclear spin qubit.