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Updated: Feb 20, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex
Jian-Hong Tang1, Tian-Ge Sun, Jiang-Yang Shao
1CAS Key Laboratory of Photochemistry, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. zhongyuwu@iccas.ac.cn.
Abstract:
The ITO/active material/Au sandwiched devices of a cobalt(ii) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>103) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.
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