Improvement of SET variability in TaO x based resistive RAM devices

Alexander Schönhals1,2, Rainer Waser1,2,3, Dirk J Wouters1,2

  • 1Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, D-52074, Aachen, Germany.

Nanotechnology
|October 24, 2017
PubMed
Abstract

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