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Updated: Feb 20, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Improvement of SET variability in TaO x based resistive RAM devices
Alexander Schönhals1,2, Rainer Waser1,2,3, Dirk J Wouters1,2
1Institute of Materials in Electrical Engineering and Information Technology II, RWTH Aachen University, D-52074, Aachen, Germany.
None:
Improvement or at least control of variability is one of the key challenges for Redox based resistive switching memory technology. In this paper, we investigate the impact of a serial resistor as a voltage divider on the SET variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A partial RESET in a competing complementary switching (CS) mode is identified as a possible failure mechanism of bipolar switching SET in our devices. Due to a voltage divider effect, serial resistance value shows unequal impact on switching voltages of both modes which allows for a selective suppression of the CS mode. The impact of voltage divider on SET variability is demonstrated. A combination of appropriate write voltage and serial resistance allows for a significant improvement of the SET variability.
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