Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

681
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
681
π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

1.7K
An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0,...
1.7K
Field Effect Transistor01:29

Field Effect Transistor

1.3K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.3K
Biasing of FET01:22

Biasing of FET

757
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
757
Electric Field Inside a Conductor01:20

Electric Field Inside a Conductor

7.6K
When a conductor is placed in an external electric field, the free charges in the conductor redistribute and very quickly reach electrostatic equilibrium. The resulting charge distribution and its electric field have many interesting properties, which can be investigated with the help of Gauss's law.
Suppose a piece of metal is placed near a positive charge. The free electrons in the metal are attracted to the external positive charge and migrate freely toward that region. This region then...
7.6K
Electric Field at the Surface of a Conductor01:26

Electric Field at the Surface of a Conductor

5.4K
Consider a conductor in electrostatic equilibrium. The net electric field inside a conductor vanishes, and extra charges on the conductor reside on its outer surface, regardless of where they originate.
In the 19th century, Michael Faraday conducted the famous ice pail experiment to prove that the charges always reside on the surface of a conductor. The experimental set-up consists of a conducting uncharged container mounted on an insulating stand. The outer surface of the container is...
5.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Precise Twist Angle Determination in Twisted WSe<sub><b>2</b></sub> via Optical Moiré Phonons.

Nano letters·2026
Same author

Roadmap for Photonics with 2D Materials.

ACS photonics·2025
Same author

Hysteretic Piezochromism in a Lead Iodide-Based Two-Dimensional Inorganic-Organic Hybrid Perovskite.

Journal of the American Chemical Society·2024
Same author

Pressure Dependence of Intra- and Interlayer Excitons in 2H-MoS<sub>2</sub> Bilayers.

Nano letters·2023
Same author

Correction to "Subsystem-Based GW/Bethe-Salpeter Equation".

Journal of chemical theory and computation·2023
Same author

The Bulk van der Waals Layered Magnet CrSBr is a Quasi-1D Material.

ACS nano·2023
Same journal

Spider-Silk-Like Single-Fiber Actuators with Two Actuation Modes Driven by Water.

Nano letters·2026
Same journal

Clicking 1,4-Dithiin Conjugated Dimaleimides for Chiroptical Evolution and Nanofabrication.

Nano letters·2026
Same journal

Dynamic Quantum Gate Based on Controllable Chiral Liquid Crystal Nanostructure.

Nano letters·2026
Same journal

Activating Phase-Transition Toughening in van der Waals Semiconductor GaTe.

Nano letters·2026
Same journal

Dual-Mode Nucleation and Dynamic Alloying of Silicon on Ag(111).

Nano letters·2026
Same journal

Surface-Neutralized HgCdSe Quantum Dots for High-Detectivity Infrared Photodetectors.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Feb 20, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.1K

Huge Trionic Effects in Graphene Nanoribbons.

Thorsten Deilmann1, Michael Rohlfing2

  • 1Center for Atomic-Scale Materials Design (CAMD), Department of Physics, Technical University of Denmark , DK-2800 Kongens Lyngby, Denmark.

Nano Letters
|October 26, 2017
PubMed
Summary
This summary is machine-generated.

Researchers predict strongly bound trions in armchair-edged graphene nanoribbons. These charged excitons exhibit large binding energies, enabling tunable optical properties for advanced optoelectronic devices.

Keywords:
1D materialsGraphene nanoribbonsexcitonsmany-body perturbation theoryoptional spectratrions

More Related Videos

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

16.5K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

Related Experiment Videos

Last Updated: Feb 20, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.1K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

16.5K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Two-dimensional materials, including graphene nanoribbons, are crucial for next-generation optoelectronics.
  • Optical properties of armchair-edged graphene nanoribbons are primarily influenced by excitons.
  • Trions, or charged excitons, can emerge in the optical spectrum with additional charges.

Purpose of the Study:

  • To investigate the formation and properties of trions in armchair-edged graphene nanoribbons.
  • To predict the binding energies and optical characteristics of trions using a first-principle many-body approach.

Main Methods:

  • Utilized a recently developed first-principle many-body approach.
  • Calculated binding energies for trions and excitons in free-standing nanoribbons.
  • Analyzed the relationship between binding energies and band gaps.

Main Results:

  • Predicted strongly bound trions with large binding energies (140-660 meV) in nanoribbons of varying widths (14.6-3.6 Å).
  • Observed a near-linear correlation between the binding energies of both trions and excitons and the band gap.
  • Identified multiple trion states originating from corresponding excitons.

Conclusions:

  • The significant binding energies of trions in graphene nanoribbons suggest potential for applications.
  • These findings open avenues for manipulating optical properties using external stimuli like electric fields.