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Updated: Feb 20, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor
K Ono1, G Giavaras2, T Tanamoto3
1Advanced device laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan.
Abstract:
We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the subthreshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anticrossing. Detailed spectroscopy at the anticrossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multiphoton spin resonances. Our experimental observations agree with theoretical calculations.
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