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High-speed combined NIR low-coherence interferometry for wafer metrology.

Hyo Mi Park, Ki-Nam Joo

    Applied Optics
    |November 2, 2017
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    Summary

    This study introduces a fast, combined low-coherence interferometric technique for simultaneously measuring wafer surface and thickness profiles. This method significantly reduces scanning length, enabling efficient 3D wafer shape reconstruction.

    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Metrology

    Background:

    • Accurate wafer characterization is crucial for semiconductor manufacturing.
    • Existing methods for measuring wafer surface and thickness profiles can be time-consuming or lack simultaneous measurement capabilities.

    Purpose of the Study:

    • To develop and verify a novel combined low-coherence interferometric technique.
    • To achieve high-speed, simultaneous measurement of wafer surface and thickness profiles.
    • To enable efficient 3D shape reconstruction of wafers.

    Main Methods:

    • A combined system integrating a spectrally resolved interferometer and a low-coherence scanning interferometer was designed.
    • The spectrally resolved interferometer monitors optical path differences.

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  • The low-coherence scanning interferometer measures wafer dimensions with a reduced scanning length.

    • Main Results:

    • The scanning length of the low-coherence scanning interferometer was reduced approximately 10-fold (from millimeters to hundreds of micrometers).
    • Surface profiles of both wafer sides and thickness profiles were measured simultaneously.
    • 3D wafer shapes were successfully reconstructed using the obtained data.

    Conclusions:

    • The proposed combined low-coherence interferometric technique offers a high-speed solution for simultaneous wafer profile measurement.
    • Significant reduction in scanning length enhances measurement efficiency.
    • The technique is effective for characterizing various wafer materials, such as silicon and sapphire.