Bulk quadrupole contribution to second harmonic generation from classical oscillator model in silicon
Related Experiment Video
Updated: Feb 19, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Abstract:
We predict the frequency-dependent bulk quadrupole contribution to second harmonic generation in silicon quantitatively from the linear susceptibility by means of a generalized classical anharmonic oscillator model and the simplified bond hyperpolarizability model. We show that in single-beam setups the main contribution is found for the silicon (111) surface, and only a minor contribution for the (001) and (011) facets. The dipole contribution obtained from our model is compared to literature values for SiC, AlAs and GaAs to demonstrate the viability of the method.
Related Concept Videos
Mass Analyzers: Common Types
Small-Signal Analysis of MOSFET Amplifiers
Oscillations In An LC Circuit
The Bohr Model
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
MOSFET Amplifiers

